agilent HMMC-3108 dc-16 ghz packaged divide-by-8 prescaler HMMC-3108-tr1 - 7? diameter reel/500 each HMMC-3108-blk - bubble strip/10 each data sheet description the HMMC-3108 is a packaged gaas hbt mmic prescaler which offers dc to 16 ghz frequency translation for use in communications and ew systems incorporating highC frequency pll oscillator circuits and signalCpath down conversion applications. the prescaler provides a large input power sensitivity window and low phase noise. absolute maximum ratings 1 (@ t a = +25 c, unless otherwise stated) features ? wide frequency range: 0.2?16 ghz high input power sensitivity: on?chip pre? and post?amps -20 to +10 dbm (1?10 ghz) -15 to +10 dbm (10?12 ghz) -10 to +5 dbm (12?15 ghz) p out : +6 dbm (0.99 v p-p ) will drive ecl low phase noise: -153 dbc/hz @ 100 khz offset (+) or (-) single supply bias with wide range: 4.5 to 6.5 v differential i/0 with on?chip 50 w w w w w matching package type: soic-8 plastic package dimensions: 4.9 x 3.9 mm typ package thickness: 1.55 mm typ lead pitch: 1.25 mm nom lead width: 0.42 mm nom symbol parameters/conditions min max units v cc bias supply voltage +7 volts v ee bias supply voltage -7 volts |v cc - v ee | bias supply delta +7 volts v logic logic threshold voltage v cc - 1.5 v cc -1.2 volts p in(cw) cw rf input power +10 dbm v rfin dc input voltage (@ rfin or rf in ports) v cc 0.5 volts t bs 2 backside operating temperature -40 +85 c t st storage temperature -65 +165 c t max maximum assembly temperature (60 seconds max) 310 c notes: 1. operation in excess of any parameter limit (except t bs ) may cause permanent damage to the device. 2. mttf >1 x 10 6 hours @ t bs <85c. operation in excess of maximum operating temperature (t bs ) will degrade mttf.
2 dc specifications/physical properties (t a = +25 c, v cc - v ee = 5.0 volts, unless otherwise listed) notes: 1. prescaler will operate over full specified supply voltage range. v cc or v ee not to exceed limits specified in absolute maximum ratings section. symbol parameters/conditions min typ max units v cc - v ee operating bias supply difference 1 4.5 5.0 6.5 volts |i cc | or |i ee | bias supply current 73 86 99 ma v rfin(q) v rfout(q) quiescent dc voltage appearing at all rf ports v cc volts v logic nominal ecl logic level (v logic contact self-bias voltage, generated on-chip) v cc -1.45 v cc -1.35 v cc -1.25 volts
3 rf specifications (t a = +25 c, z 0 = 50 w , v cc - v ee = 5.0 volts) notes: 1. for sine?wave input signal. prescaler will operate down to dc for square?wave input signal. min. divide frequency limited by input slew rate. 2. prescaler can exhibit this output signal under bias in the absence of an rf input signal. this condition can be eliminated by use of the input dc offset technique described on page 4. 3. fundamental of output square wave?s fourier series. 4. square wave amplitude calculated from p out . symbol parameters/conditions min typ max units ? in(max) maximum input frequency of operation 16 18 ghz ? in(min) minimum input frequency of operation 1 (p in = -10 dbm) 0.2 0.5 ghz ? sel-osc. output self-oscillation frequency 2 3.4 ghz p in @ dc, (square-wave input) -15 >-25 +10 dbm @ ? in = 500 mhz, (sine-wave input) -15 >-20 +10 dbm ? in = 1 to 8 ghz -15 >-25 +10 dbm ? in = 8 to 10 ghz -10 >-15 +10 dbm ? in = 10 to 12 ghz -4 >-10 +4 dbm rl small-signal input/output return loss (@ ? in <10 ghz) 15 db s 12 small-signal reverse isolation (@ ? in <10 ghz) 30 db j n ssb phase noise (@ p in = 0 dbm, 100 khz offset from a ? ou t = 1.2 ghz carrier) -153 dbc/hz jitter input signal time variation @ zero-crossing (? in = 10 ghz, p in = -10 dbm) 1ps t r or t f output transition time (10% to 90% rise/fall time) 70 ps p out 3 @ ? out < 1 ghz 4 6 dbm @ ? out = 2.5 ghz 3.5 5.5 dbm @ ? out = 3.0 ghz 0 2.0 dbm |v out(p-p) | 4 @ ? out < 1 ghz 0.99 volts @ ? out = 2.5 ghz 0.94 volts @ ? out = 3.0 ghz 0.63 volts p spitback ? out power level appearing at rf in or rf out (@ ? in 10 ghz, unused rf out or rf out unterminated) -40 dbm ? out power level appearing at rf in or rf out (@ ? in 10 ghz, both rf out or rf out unterminated) -47 dbm p feedthru power level of ? in appearing at rf out or rf out (@ ? in = 12 ghz, pin = 0 dbm, referred to p in (? in )) -23 dbc h 2 second harmonic distortion output level (@ ? out = 3.0 ghz, referred to p out (? out )) -25 dbc
4 applications the HMMC-3108 is designed for use in high frequency communications, microwave instrumentation, and ew radar systems where low phaseCnoise pll control circuitry or broadC band frequency translation is required. operation the device is designed to operate when driven with either a singleCended or differential sinusoidal input signal over a 200 mhz to 16 ghz bandwidth. below 200 mhz the prescaler input is slewCrate limited, requiring fast rising and falling edge speeds to properly divide. the device will operate at frequencies down to dc when driven with a squareCwave. due to the presence of an offC chip rfCbypass capacitor inside the package (connected to the v cc contact on the device), and the unique design of the device itself, the component may be biased from either a single positive or single negative supply bias. the backside of the package is not dc connected to any dc bias point on the device. for positive supply operation, v cc pins are nominally biased at any voltage in the +4.5 to +6.5 volt range with pin 8 (v ee ) grounded. for negative bias operation v cc pins are typically grounded and a negative voltage between -4.5 to -6.5 volts is applied to pin 8 (v ee ). ac?coupling and dc?blocking all rf ports are dc connected onCchip to the v cc contact through onCchip 50 w resistors. under any bias conditions where v cc is not dc grounded the rf ports should be ac coupled via series capacitors mounted on the pcC board at each rf port. only under bias conditions where v cc is dc grounded (as is typical for negative bias supply operation) may the rf ports be direct coupled to adjacent circuitry or in some cases, such as level shifting to subsequent stages. in the latter case the package heat sink may be floated and bias applied as the difference between v cc and v ee . input dc offset if an rf signal with sufficient signal to noise ratio is present at the rf input lead, the prescaler will operate and provide a divided output equal the input frequency divided by the divide modulus. under certain ideal conditions where the input is well matched at the right input frequency, the component may selfCoscillate, especially under small signal input powers or with only noise present at the input. this selfCoscillation will produce an undesired output signal also known as a false trigger. to prevent false triggers or selfC oscillation conditions, apply a 20 to 100 mv dc offset voltage between the rfin and rfin ports. this prevents noise or spurious low level signals from triggering the divider. adding a 10k w resistor between the unused rf input to a contact point at the vee potential will result in an offset of ? 25mv between the rf inputs. note, however, that the input sensitivity will be reduced slightly due to the presence of this offset. figure 1. simplified schematic v cc v cc v cc v ee out in in out soic8 w/backside gnd 6 42 150p 5 7 by poss in in 50 50 v cc v cc v cc 50 50 out out 3 pin 1 8 v ee vpwr sel
5 agilent application note #54, gaas mmic esd, die attach and bonding guidelines provides basic information on these subjects. additional references: pn #18, hbt prescaler evaluation board. notes: - all dimensions in millimeters. - refer to jedec outline ms-012 for additional tolerances. - exposed heat slug area on pkg bottom = 2.67 x 1.65 - exposed heat sink on package bottom must be soldered to pcb rf ground plane. assembly notes independent of the bias applied to the package, the backside of the package should always be connected to both a good rf ground plane and a good thermal heat sinking region on the pcCboard to optimize performance. for singleCended output operation the unused rf output lead should be terminated into 50 w to a contact point at the v cc potential or to rf ground through a dc blocking capacitor. a minimum rf and thermal pc board contact area equal to or greater than 2.67 x 1.65 mm (0.105" x 0.065") with eight 0.020" diameter platedCwall thermal vias is recommended. mmic esd precautions, handling considerations, die attach and bonding methods are critical factors in successful gaas mmic performance and reliability. figure 2. package & dimensions figure 3. assembly diagram (single-supply, positive-bias configuration shown) symbol min max a 1.35 1.75 a1 0.0 .25 b 0.33 0.51 c 0.19 .025 d4.805.00 e 3.80 4.00 e1.27 bsc h 5.80 6.20 l 0.40 1.27 a08 rfin v cc (+4.5 to +6.5 volts) ~ 1 mf mo noblock capacitor rfin rfout v cc v cc v cc rfout v ee to operate component from a negative supply, ground each v cc connection and supply v ee with a negative voltage (-4.5 to -6.5v) bypassed to ground with ~ 1 mf capacitor. rf out should be terminated in 50 ? to ground. (dc blocking capacitor required for positive bias configuration.) 9618 HMMC-3108 exposed heat sink on package bottom must be soldered to pcb rf ground.
6 supplemental data figure 4. typical input sensitivity window figure 6. typical output voltage waveform figure 8. typicalphase noise performance figure 5. typical supply current & v logic vs. supply voltage figure 7. typical output power vs. output frequency ? out (ghz) figure 9. typical ?spitback? power p(? out ) appearing at rf input port
7 device orientation tape dimensions and product orientation notes: 1. 10 sprocket hole pitch cumulative tolerance: 0.2mm. 2. camber not to exceed 1mm in 100mm. 3. material: black conductive advantek polystyrene. 4. ao and bo measured on a plane 0.3mm above the bottom of the pocket. 5. ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 6. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. reel tape user feed direction cover tape 1.75 12.0 0.3 1.5+0.1/-0.0 a 5.5 0.05 see note 6 r0.5 typical a 8.0 ao bo ko section a-a 1.5 min r0.3 max. 0.30 0.05 see note 1 see note 6 2.0 0.05 4.0 ao = 6.4mm bo = 5.2 mm ko = 2.1 mm
www.agilent.com/ semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6271 2451 india, australia, new zealand: (+65) 6271 2394 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (+65) 6271 2194 malaysia, singapore: (+65) 6271 2054 taiwan: (+65) 6271 2654 data subject to change. copyright ? 2003 agilent technologies, inc. january 27, 2003 5988-6161en
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